Browse Prior Art Database

Sample Preparation for Increased SIMS Sensitivity

IP.com Disclosure Number: IPCOM000046438D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kempf, J: AUTHOR [+3]

Abstract

The detection sensitivity of secondary mass ion spectroscopy (SIMS) for ions in a host lattice is increased by collecting the ions in a thin surface layer under the influence of an electric field at elevated temperatures.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Sample Preparation for Increased SIMS Sensitivity

The detection sensitivity of secondary mass ion spectroscopy (SIMS) for ions in a host lattice is increased by collecting the ions in a thin surface layer under the influence of an electric field at elevated temperatures.

Sodium ions in SiO2 can be detected by SIMS for concentrations greater than 1014-1016/cm3; as these ions influence the electrical properties of metal oxide semiconductor (MOS) transistors even at lower concentrations, a higher SIMS sensitivity is needed. This is obtained by utilizing the high mobility of such ions in SiO2 at moderate temperatures (200C or less). Prior to SIMS analysis, an electric potential of about 1 MV/cm is applied to the sample which is then heated for about 10 minutes and cooled to room temperature with the potential still present to freeze the ions. The Na+-rich surface layer is subsequently analyzed by conventional SIMS and the original bulk concentration calculated from the surface concentration.

The improvement in SIMS sensitivity is 2 to 3 orders of magnitude with a considerably reduced SIMS analysis time.

1