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ELEVATED TEMPERATURE ION CLEANING OF GaAs

IP.com Disclosure Number: IPCOM000046550D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Freeouf, JL: AUTHOR [+2]

Abstract

GaAs surfaces for growth by the technique of molecular beam epitaxy require very clean well-ordered surfaces. It has been found that clean, well-ordered GaAs < 100 and< 110 oriented surfaces that are bombarded by Ar+ ions at energies greater than 100 eV while at temperatures above or equal to 150ŒC exhibit superior cleanliness and order in freedom from oxygen and carbon content. The surface can be further improved with a post bombardment anneal.

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ELEVATED TEMPERATURE ION CLEANING OF GaAs

GaAs surfaces for growth by the technique of molecular beam epitaxy require very clean well-ordered surfaces. It has been found that clean, well-ordered GaAs < 100 and< 110 oriented surfaces that are bombarded by Ar+ ions at energies greater than 100 eV while at temperatures above or equal to 150OEC exhibit superior cleanliness and order in freedom from oxygen and carbon content. The surface can be further improved with a post bombardment anneal.

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