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Sputtering Target Rework Process

IP.com Disclosure Number: IPCOM000046604D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Cistola, AB: AUTHOR

Abstract

During a sputtering process, e.g., a cermet sputtering process, the sputtering target is monitored by an acoustic emission (AE) monitoring system and, if it detects a void in the target material, i.e., the cermet, from which undesirable gas contaminants are released, in-process corrective action can be initiated that accelerates the release of the gas, thereby maintaining the utility of the target which otherwise may have had to be scrapped. The system correlates the information to be analyzed from two known AE sensor monitors, in which one detects the cracks and the other detects the rate of sputtering. It monitors and analyzes for sputtering target cracks and the resultant outgas therefrom and, when a crack is detected, continues monitoring the sputtering rate for verification that the corrective action was effective.

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Sputtering Target Rework Process

During a sputtering process, e.g., a cermet sputtering process, the sputtering target is monitored by an acoustic emission (AE) monitoring system and, if it detects a void in the target material, i.e., the cermet, from which undesirable gas contaminants are released, in-process corrective action can be initiated that accelerates the release of the gas, thereby maintaining the utility of the target which otherwise may have had to be scrapped. The system correlates the information to be analyzed from two known AE sensor monitors, in which one detects the cracks and the other detects the rate of sputtering. It monitors and analyzes for sputtering target cracks and the resultant outgas therefrom and, when a crack is detected, continues monitoring the sputtering rate for verification that the corrective action was effective. In the present AE system, one of the known AE sensor monitors uses an AE sensor which is attached directly to the target backing plate through a waveguide [1]. The other uses an AE sensor attached to the RF shield that surrounds the target backing plate [2]. The first mentioned monitor detects cracks in the target, and the second monitor detects sputtering rate and changes therein. The release of trapped gas from target bond voids is most often the result of a crack which generates a release of acoustic emission and a resultant reduction of the sputtering rate. If a void is slowly releasing the contaminating gas in...