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Method to Detect Location of Severe Flux Divergences

IP.com Disclosure Number: IPCOM000046834D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hopper, GS: AUTHOR [+2]

Abstract

It has been shown that hot spots, visible in infrared-red, are generated in heavily doped polysilicon which appear at sites of negative flux divergences. These hot spots are generated because of the extreme sensitivity of polysilicon resistivity to dopant concentration in the grain boundaries and the relatively high dopant diffusivity. These hot spots appear in a short time of about 10 minutes. This property of polysilicon can be used to find regions of flux divergence in metal patterns by first making a structure geometry out of polysilicon which is similar to the metal pattern in the circuit design under consideration. This pattern is doped and annealed to provide the highest conductivity attainable.

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Method to Detect Location of Severe Flux Divergences

It has been shown that hot spots, visible in infrared-red, are generated in heavily doped polysilicon which appear at sites of negative flux divergences. These hot spots are generated because of the extreme sensitivity of polysilicon resistivity to dopant concentration in the grain boundaries and the relatively high dopant diffusivity. These hot spots appear in a short time of about 10 minutes. This property of polysilicon can be used to find regions of flux divergence in metal patterns by first making a structure geometry out of polysilicon which is similar to the metal pattern in the circuit design under consideration. This pattern is doped and annealed to provide the highest conductivity attainable. Powering of these circuits at current densities of about 106 A/cm2 will bring out the hot spots at sites of flux divergence which can be recorded with infrared micrography.

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