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Browse Prior Art Database

Superimposition of Photoresist Patterns

IP.com Disclosure Number: IPCOM000046925D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Horng, CT: AUTHOR [+2]

Abstract

A method of superimposing a plurality of photoresist patterns, having sufficient chemical stability to eliminate the problem of intermixing of photoresist layers, involves plasma treating a first photoresist pattern that is subsequently covered with a second photoresist pattern. The method includes the steps of (a) plasma treating a developed positive photoresist pattern, (b) post baking the plasma-treated wafers, (c) spin coating and baking a second layer of positive photoresist, and (d) over-exposing and over-developing the second layer of photoresist using the same mask or simplifying another mask. This process allows superimposition of photoresist patterns without the photoresist intermixing that degrades the integrity of the preceding photoresist device patterns.

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Superimposition of Photoresist Patterns

A method of superimposing a plurality of photoresist patterns, having sufficient chemical stability to eliminate the problem of intermixing of photoresist layers, involves plasma treating a first photoresist pattern that is subsequently covered with a second photoresist pattern. The method includes the steps of (a) plasma treating a developed positive photoresist pattern, (b) post baking the plasma- treated wafers, (c) spin coating and baking a second layer of positive photoresist, and (d) over-exposing and over-developing the second layer of photoresist using the same mask or simplifying another mask. This process allows superimposition of photoresist patterns without the photoresist intermixing that degrades the integrity of the preceding photoresist device patterns.

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