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Photoresist Structure for Lifting Off Sputtered Metal Films

IP.com Disclosure Number: IPCOM000046926D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Horng, CT: AUTHOR [+3]

Abstract

A two-layer photoresist structure that can withstand the heat created in a sputtering process includes a first resist layer that is baked and then plasma treated. Conductor lift-off techniques using photoresist structures are a common process technology to form high resolution metallization patterns. Metal films used for conductor lift-off normally are deposited by evaporation. Sputtering due to its good step coverage feature, however, is not compatible with the lift-off technique. To defeat the step coverage, the resist structure for lifting off a sputtered film has to have a sharp and well-defined undercut profile. This resist structure must also be able to withstand the heat created in the sputtering process. The following process can be used to create a photoresist pattern for lifting off a sputtered film.

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Photoresist Structure for Lifting Off Sputtered Metal Films

A two-layer photoresist structure that can withstand the heat created in a sputtering process includes a first resist layer that is baked and then plasma treated. Conductor lift-off techniques using photoresist structures are a common process technology to form high resolution metallization patterns. Metal films used for conductor lift-off normally are deposited by evaporation. Sputtering due to its good step coverage feature, however, is not compatible with the lift-off technique. To defeat the step coverage, the resist structure for lifting off a sputtered film has to have a sharp and well-defined undercut profile. This resist structure must also be able to withstand the heat created in the sputtering process. The following process can be used to create a photoresist pattern for lifting off a sputtered film. This lift-off resist pattern is obtained in a dual layer structure formed with two different types of photoresist, for example, a AZ- 2400/AZ-1450J resist combination. The bottom resist AZ-1450J in this dual layer structure is treated with a CF4 plasma process prior to spin coating the top resist layer. This plasma treatment is used to prevent intermixing between the two applied resists. The coated resist is then exposed with a metallization pattern. Development of the dual resist structure can be done either in a single developer solution, e.g., AZ-2400 developer, or the two resist layers can be d...