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New Resist Combination for Forming a Two-Layer Photoresist Lift-Off Mask

IP.com Disclosure Number: IPCOM000046928D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Horng, CT: AUTHOR [+2]

Abstract

A new two-layer resist combination can be used to form lift-off resist structures for fabricating high resolution metallization patterns. This dual-layer photoresist lift-off structure is formed by using Macdermid PR-75 (or PR-74) photoresist as a bottom resist layer. The top resist layer is a Shipley AZ-2400 photoresist. Both resists are commercially available positive-type photoresists. These two resists when applied sequentially do not have an intermixing problem. The processes for coating, exposing and developing this dual-layer resist to form lift-off structure are fairly simple as compared to that of the other two-layer resist systems. The process steps for forming the lift-off masks using this new resist combination are described in the following: 1. Spin coat HMDS (Hexamethyldisilazane) adhesion promoter. 2.

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New Resist Combination for Forming a Two-Layer Photoresist Lift-Off Mask

A new two-layer resist combination can be used to form lift-off resist structures for fabricating high resolution metallization patterns. This dual-layer photoresist lift-off structure is formed by using Macdermid PR-75 (or PR-74) photoresist as a bottom resist layer. The top resist layer is a Shipley AZ-2400 photoresist. Both resists are commercially available positive-type photoresists. These two resists when applied sequentially do not have an intermixing problem. The processes for coating, exposing and developing this dual-layer resist to form lift-off structure are fairly simple as compared to that of the other two-layer resist systems. The process steps for forming the lift-off masks using this new resist combination are described in the following: 1. Spin coat HMDS (Hexamethyldisilazane) adhesion promoter. 2. Spin coat Macdermid PR-75 (or PR-74) photoresist,

e.g.,1.5 mm thick. 3. Soft bake the applied resist layer at 90-95 C for 30 minutes. 4. Spin coat Shipley AZ-2400 photoresist, e.g., 0.5 mmm

thick. 5. Soft bake the wafer at 90 C for 15 minutes. 6.

Expose the resist in UV light. 7. Develop the exposed resist in a solution consisting of 2:1 Macdermid developer: DI water. Undercutting in the developed resist pattern is achieved through a faster developing rate of the Macdermid resist than the Shipley resist. The degree of undercutting in this dual-layer resist lift-off structure can...