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Photoresist Slope Control by Adjusting the Bandwidth and Wavelength of the Exposure Light

IP.com Disclosure Number: IPCOM000047020D
Original Publication Date: 1983-Sep-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Badami, DA: AUTHOR [+3]

Abstract

A method is disclosed for controlling the developed photoresist slope profile by selecting and adjusting the relative intensity of the different wavelength components of the UV exposure light. Many semiconductor processes require a variety of photoresist profiles. For example, photoresist slopes of less than 45Πare needed to uniformly tailor certain ion implant profiles, and photoresist slopes of over 75Πare often necessary for the effective use of anisotropic dry etching techniques for making small geometry semiconductor devices. Current photolithographic processes provide for the adjustment of the exposure or development time or developer concentration to produce shallow or steep photoresist profiles.

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Photoresist Slope Control by Adjusting the Bandwidth and Wavelength of the Exposure Light

A method is disclosed for controlling the developed photoresist slope profile by selecting and adjusting the relative intensity of the different wavelength components of the UV exposure light. Many semiconductor processes require a variety of photoresist profiles. For example, photoresist slopes of less than 45OE are needed to uniformly tailor certain ion implant profiles, and photoresist slopes of over 75OE are often necessary for the effective use of anisotropic dry etching techniques for making small geometry semiconductor devices. Current photolithographic processes provide for the adjustment of the exposure or development time or developer concentration to produce shallow or steep photoresist profiles. It has been found that by adjusting the relative concentration of the different wavelength components of the exposure light, it is possible to produce even steeper or shallower photoresist slopes. Relatively shallow photoresist slopes can be produced by a broadband mid-UV exposure of several diazo photoresists, as shown in Fig. 1. It has also been found that by narrowing the illumination band width of the exposure light, a steeper photoresist slope can be produced, as shown in Fig. 2.

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