Browse Prior Art Database

Dual Buried Contact Monitor

IP.com Disclosure Number: IPCOM000047022D
Original Publication Date: 1983-Sep-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Freeman, EH: AUTHOR

Abstract

This article describes a buried contact structure that allows one of a pair of buried contact monitor structures to be connected automatically to a single set of pads regardless of whether the buried contacts are used for the first or second polysilicon layer. This saves one set of pads. In Fig. 1, there is shown a structure which is built using the buried contact mask to etch two openings in the first gate oxide. The first polysilicon (Poly 1) layer is first deposited and etched in opening 10, and a second gate oxide 12 is allowed to cover the second opening; then the second polysilicon layer (Poly 2) is deposited over the second gate oxide 12. The metal electrode makes contact with Poly 1 through a doped region 14 in the substrate. Fig. 2 illustrates an alternative use of this mask.

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Dual Buried Contact Monitor

This article describes a buried contact structure that allows one of a pair of buried contact monitor structures to be connected automatically to a single set of pads regardless of whether the buried contacts are used for the first or second polysilicon layer. This saves one set of pads. In Fig. 1, there is shown a structure which is built using the buried contact mask to etch two openings in the first gate oxide. The first polysilicon (Poly 1) layer is first deposited and etched in opening 10, and a second gate oxide 12 is allowed to cover the second opening; then the second polysilicon layer (Poly 2) is deposited over the second gate oxide 12. The metal electrode makes contact with Poly 1 through a doped region 14 in the substrate. Fig. 2 illustrates an alternative use of this mask. This structure is built by first forming the Poly 1 layer and then growing the second gate oxide 18. This is followed by a buried contact etch which results in an opening 20 in the second gate oxide 18 so that Poly 2 can make contact with doped region 22. Poly 1 is insulated from the doped region 22 by the first gate oxide 19.

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