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PROCESS FOR TUNNEL BARRIER GROWTH ON Nb BASE ELECTRODES

IP.com Disclosure Number: IPCOM000047115D
Original Publication Date: 1983-Sep-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gasser, M: AUTHOR [+3]

Abstract

Processes currently employed for the formation of Nb2O5 tunnel barriers on Nb base electrodes involve an ultra-high-vacuum (base pressure of < 10-10 Torr) Ar-RF surface cleaning of the base electrode, this step being followed by an Ar/CH4 plasma treatment to form a niobium carbide surface compound, and by a subsequent Ar/O2-oxidation. It has now been found that the cleaning step can be eliminated, thus permitting the remaining process steps to be carried out in standard fabrication systems (at, e.g., 10-8 Torr base pressure). The resulting two-step process can be improved by preceding it with a pure oxygen discharge process that effectively preconditions both the sample and the system.

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PROCESS FOR TUNNEL BARRIER GROWTH ON Nb BASE ELECTRODES

Processes currently employed for the formation of Nb2O5 tunnel barriers on Nb base electrodes involve an ultra-high-vacuum (base pressure of < 10-10 Torr) Ar- RF surface cleaning of the base electrode, this step being followed by an Ar/CH4 plasma treatment to form a niobium carbide surface compound, and by a subsequent Ar/O2-oxidation. It has now been found that the cleaning step can be eliminated, thus permitting the remaining process steps to be carried out in standard fabrication systems (at, e.g., 10-8 Torr base pressure). The resulting two-step process can be improved by preceding it with a pure oxygen discharge process that effectively preconditions both the sample and the system. This provides for reproducible and comparable conditions, and results in a reduction of the random variations between individual devices on a wafer and in an improvement of the run-to-run reproducibility.

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