Browse Prior Art Database

Fabrication of Micron/Submicron Metal Lines

IP.com Disclosure Number: IPCOM000047196D
Original Publication Date: 1983-Oct-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Lawson, J: AUTHOR [+3]

Abstract

One of the lift-off methods utilizing polymethylsiloxane resin (also known as resin glass, spun-on-glass) as a barrier layer (U.S. Patent 4,004,044) is being used for the deposition of thin films in the fabrication of integrated circuits. One of the problems often encountered is the cracking of the electron beam sensitive terpolymer P(MMA-MA-MAA) layer and the underlying resin glass layer during the development cycle. The second problem is the excessive upward curling of the overhand ledge structure of the lift-off stencil during sputter cleaning (necessary for better electrical continuity) and/or during metal deposition.

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Fabrication of Micron/Submicron Metal Lines

One of the lift-off methods utilizing polymethylsiloxane resin (also known as resin glass, spun-on-glass) as a barrier layer (U.S. Patent 4,004,044) is being used for the deposition of thin films in the fabrication of integrated circuits. One of the problems often encountered is the cracking of the electron beam sensitive terpolymer P(MMA-MA-MAA) layer and the underlying resin glass layer during the development cycle. The second problem is the excessive upward curling of the overhand ledge structure of the lift-off stencil during sputter cleaning (necessary for better electrical continuity) and/or during metal deposition. This curling causes 1) excessively long metal lift-off time, 2) edge tearing of the metal lines, 3) metal build-up at the edges of the lines leading to interlevel electrical shorts, and 4) variable metal width dimensions. The controlling process parameters are: 1) deposition of non-curling and non-cracking silicon nitride barrier layer deposited by RF plasma process (U.S. Patent 4,202,914), 2) electron beam dose density for sharply defined developed images in the imaging resist layer, and 3) lift-off reactive ion etching for appropriate overhand in the lift- off structure. By the optimization of these three important processing parameters, excellent dimensional control in micron/submicron (0.8 mm) range (3 t tolerance = 0.2 mm) for the metal lines (both first and second level metallizations) have been...