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PLASMA SiN DEPOSITION

IP.com Disclosure Number: IPCOM000047207D
Original Publication Date: 1983-Oct-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Martinet, F: AUTHOR

Abstract

This article relates to some improvements in both standard uniformity plasma equipment, such as described in U.S. Patent 3,757,733 and reproducibility of SiN films. The improvements comprise: 1) Providing two separate gas inlets to the equipment 10 for better deposition uniformity and low hydrogen content. . The first inlet 11 is for nitrogen which is difficult to break. Below are appearance potentials for nitrogen-containing species. (Image Omitted) . The second inlet 12 is for SiH4 which is easy to break, combined with the use of a shower-type electrode 13 which allows a better distribution of SiH4 gas and reduces the "depletion effect" which is known to be associated with this type of equipment. 2) Applying two different frequencies. . A microwave discharge for N2 (14).

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PLASMA SiN DEPOSITION

This article relates to some improvements in both standard uniformity plasma equipment, such as described in U.S. Patent 3,757,733 and reproducibility of SiN films. The improvements comprise: 1) Providing two separate gas inlets to the equipment 10 for better deposition uniformity and low hydrogen content. . The first inlet 11 is for nitrogen which is difficult to break. Below are appearance potentials for nitrogen-containing species.

(Image Omitted)

. The second inlet 12 is for SiH4 which is easy to break, combined with the use of a shower-type electrode 13 which allows a better distribution of SiH4 gas and reduces the "depletion effect" which is known to be associated with this type of equipment. 2) Applying two different frequencies. . A microwave discharge for N2
(14). Nitrogen molecules are broken into atomic nitrogen without hydrogen with higher efficiency than with a low frequency glow discharge. This process avoids the use of NH3 and therefore the use of nitrogen only as the reactant gas with SiH4, and reduces the hydrogen content of the SiN film, which is highly desirable. A low frequency (15), less than 450 KHz and preferably 50 KHz, between both electrodes is sufficient to break SiH4 and enhance the sheath potentials at higher pressure. High sheath potentials are needed to overcome the randomizing effect of gas scattering and get higher ion bombardment energies. This low frequency allows one to get better deposition uniformity and...