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Chemically Enhanced Laser Etching

IP.com Disclosure Number: IPCOM000047234D
Original Publication Date: 1983-Oct-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Anderson, RB: AUTHOR [+3]

Abstract

The widespread use of laser technology in material removal has been delayed due to the problems encountered with substrate redeposition. This phenomenon causes surface roughness, lack of etch depth control and poor reproducibility of microgeometries. To prevent redeposition, the laser beam is directed through a substance and onto the substrate to be etched. This absorbing substance could be in a liquid or gaseous form and must have an affinity with the substrate material for getting the particles. The vessel which contains the absorbing substance and substrate should be constructed of a material transparent to the wavelength of the laser being used. Upon irradiation of the substrate surface by the laser, atoms or groups of atoms are vaporized.

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Chemically Enhanced Laser Etching

The widespread use of laser technology in material removal has been delayed due to the problems encountered with substrate redeposition. This phenomenon causes surface roughness, lack of etch depth control and poor reproducibility of microgeometries. To prevent redeposition, the laser beam is directed through a substance and onto the substrate to be etched. This absorbing substance could be in a liquid or gaseous form and must have an affinity with the substrate material for getting the particles. The vessel which contains the absorbing substance and substrate should be constructed of a material transparent to the wavelength of the laser being used. Upon irradiation of the substrate surface by the laser, atoms or groups of atoms are vaporized. Due to the vaporized atoms in intimate proximity to a substance they can react with, redeposition on the substrate does not occur. Use of a flow cell type of vessel would provide a fresh supply of absorbing substance to the laser beam-substrate interface. A process of this type is applicable wherever laser machining or etching can be implemented, resulting in better control of surface finish and microgeometries.

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