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Browse Prior Art Database

Titanium Oxide As a Mask for Plasma Etching of Films on Semiconductors

IP.com Disclosure Number: IPCOM000047284D
Original Publication Date: 1983-Oct-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

McGibbon, RC: AUTHOR [+3]

Abstract

This article relates generally to a process for plasma etching of metal films on semiconductors and more particularly to the use of titanium oxide as a mask for plasma etching of metal films on semiconductors. When titanium dioxide is deposited at low temperature, it is easily etched in buffered HF to form metal patterns on substrates of semiconductor material like gallium arsenide. The titantium oxide is more easily removed after being subjected to the ion bombardment of plasma etching than photoresist. High temperature metals, such as tungsten (W), titanium tungsten (TiW), and molybdenum (Mo), may be plasma etched using titanium dioxide as a mask. After plasma etching, the titanium oxide mask is easily removed using buffered HF without significant etching of semiconductor material, such as gallium arsenide.

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Titanium Oxide As a Mask for Plasma Etching of Films on Semiconductors

This article relates generally to a process for plasma etching of metal films on semiconductors and more particularly to the use of titanium oxide as a mask for plasma etching of metal films on semiconductors. When titanium dioxide is deposited at low temperature, it is easily etched in buffered HF to form metal patterns on substrates of semiconductor material like gallium arsenide. The titantium oxide is more easily removed after being subjected to the ion bombardment of plasma etching than photoresist. High temperature metals, such as tungsten (W), titanium tungsten (TiW), and molybdenum (Mo), may be plasma etched using titanium dioxide as a mask. After plasma etching, the titanium oxide mask is easily removed using buffered HF without significant etching of semiconductor material, such as gallium arsenide. The steps in the process are shown in conjunction with Figs. 1-6. Referring now to Fig. 1, there is shown a substrate 1 of semiconductor material, such as gallium arsenide, having a layer 2 of titanium tungsten, for example, formed on its upper surface. In the succeeding step shown in Fig. 2, layers 3 and 4 of titanium dioxide and photoresist, respectively, are formed successively on layer 2. Film 3 of titanium dioxide may be formed by the hydrolysis of titanium tetrachloride. A typical process causes a gas, such as nitrogen, oxygen or helium, to be passed into a flask and over liquid titanium tetrachloride at about room temperature. The resulting gas stream exits from a nozzle and passes over substrate 1 which is preferably held anywhere in a range of about room temperature to about 100OEC. Substrate 1 may be heated by the use of a hot plate. Depending upon temperature, t...