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Via Hole Structure With Improved Reliability

IP.com Disclosure Number: IPCOM000047370D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Dahmen, M: AUTHOR [+4]

Abstract

Fig. 1 is a sectional view of a standard via hole which serves to connect the end of a conductor 1 of the first metallization plane to a conductor 2 of the second metallization plane. When the silicon dioxide 3 on conductor 1 is etched, it is also removed from underneath the upper surface 4 of conductor 1, so that vapor deposition of the second metallization plane produces a small region 5 on the via hole wall where the thickness of the vapor-deposited layer is smallest. This region reduces the reliability of the via hole. This can be avoided by shaping the end of conductor 1 in the form of a cross, with the cross bars extending slightly beyond the via hole, as shown in the plan view of Fig. 2.

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Via Hole Structure With Improved Reliability

Fig. 1 is a sectional view of a standard via hole which serves to connect the end of a conductor 1 of the first metallization plane to a conductor 2 of the second metallization plane. When the silicon dioxide 3 on conductor 1 is etched, it is also removed from underneath the upper surface 4 of conductor 1, so that vapor deposition of the second metallization plane produces a small region 5 on the via hole wall where the thickness of the vapor-deposited layer is smallest. This region reduces the reliability of the via hole. This can be avoided by shaping the end of conductor 1 in the form of a cross, with the cross bars extending slightly beyond the via hole, as shown in the plan view of Fig. 2. Thus, during vapor deposition of the second metallization plane, no areas underneath the upper surface 4 of conductor 1 have to be filled with metal. As a result, the metal is deposited with a uniform thickness on the via hole wall, as shown in the sectional view of Fig. 3.

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