Browse Prior Art Database

Metal-Free Temperature Sensor

IP.com Disclosure Number: IPCOM000047376D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Krogmann, GH: AUTHOR [+3]

Abstract

A silicon wafer 1 is clamped between two protrusions 2 and 3 of a quartz tube 4. Protrusions 2 and 3 have polished surfaces perpendicular to the tube axis, so that wafer 1 and quartz tube 4 are in close thermal contact. Wafer 1 is of P material and N-doped on one side, thus acting as a diode, whose resistance is temperature-dependent. An electrical contact is provided on each side of the wafer. Wafer 1 has an opening 5 which is produced, for example, by an ultrasonic method and permits gas to be transported through tube and wafer. Opening 5 is slightly smaller than the opening of tube 4 for improving the contact between gas and wafer. As no metallic material is used for temperature sensing, the illustrated semiconductor sensor has an extremely short response time.

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Metal-Free Temperature Sensor

A silicon wafer 1 is clamped between two protrusions 2 and 3 of a quartz tube 4. Protrusions 2 and 3 have polished surfaces perpendicular to the tube axis, so that wafer 1 and quartz tube 4 are in close thermal contact. Wafer 1 is of P material and N-doped on one side, thus acting as a diode, whose resistance is temperature-dependent. An electrical contact is provided on each side of the wafer. Wafer 1 has an opening 5 which is produced, for example, by an ultrasonic method and permits gas to be transported through tube and wafer. Opening 5 is slightly smaller than the opening of tube 4 for improving the contact between gas and wafer. As no metallic material is used for temperature sensing, the illustrated semiconductor sensor has an extremely short response time.

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