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Cathode Design for Reactive Ion Etching Apparatus

IP.com Disclosure Number: IPCOM000047379D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Fischer, G: AUTHOR [+2]

Abstract

This article describes a new design for a cathode assembly in a reactive ion etching (RIE) apparatus which allows a large number of wafers to be etched at a uniform rate. Basically, the apparatus consists of a 28" diameter aluminum water-cooled cathode 1. An unbonded quartz plate 3 is used to support the silicon wafers on the cathode device. To prevent the atmosphere from entering the chamber, an 0-ring is located at position 5. To electrically isolate the cathode from the chamber, insulator ring 7 and insulators 9 are used. The base plate 11 is an integral part of the chamber, and is mechanically bolted to the cathode 1 through insulator 9. To lower the capacitance from the base plate 11, the base plate area was reduced and a shield plate 13 was attached.

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Cathode Design for Reactive Ion Etching Apparatus

This article describes a new design for a cathode assembly in a reactive ion etching (RIE) apparatus which allows a large number of wafers to be etched at a uniform rate. Basically, the apparatus consists of a 28" diameter aluminum water-cooled cathode 1. An unbonded quartz plate 3 is used to support the silicon wafers on the cathode device. To prevent the atmosphere from entering the chamber, an 0-ring is located at position 5. To electrically isolate the cathode from the chamber, insulator ring 7 and insulators 9 are used.

The base plate 11 is an integral part of the chamber, and is mechanically bolted to the cathode 1 through insulator 9. To lower the capacitance from the base plate 11, the base plate area was reduced and a shield plate 13 was attached. A water supply is provided to cool the cathode through the helical copper cooling coil
15. The cathode is connected via matchbox connection 17 to the 13.5 MHz RF generator 19. An advantage of this new design is that it permits a large number of wafers to be etched at a uniform rate, thus improving throughput. Another advantage is that it substantially reduces RIE tooling costs.

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