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Browse Prior Art Database

Memory Cell With Internal Soliton Generation

IP.com Disclosure Number: IPCOM000047494D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Rajeevakumar, T: AUTHOR [+2]

Abstract

Solitons generated internally within a memory cell, as a result of applied DC input currents, are effective to provide read/write signals for the cell. The device is shown schematically in Fig. 1. Fig. 1 is a schematic top view of Josephson transmission lines; the groundplane is the bottom electrode of the transmission lines; the shaded areas are isolation resistors (N/N33 L)in the top electrode of the junctions, and inductors are connected between the top electrode and ground in sections 1, 2, 3, and 4. Each of these inductors has LI0D0/2. Sections 2, 3, 5, and 6 have a length approximately gj; sections 1 and 4 are about 3gj in length. Four control lines are magnetically coupled as shown.

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Memory Cell With Internal Soliton Generation

Solitons generated internally within a memory cell, as a result of applied DC input currents, are effective to provide read/write signals for the cell. The device is shown schematically in Fig. 1.

Fig. 1 is a schematic top view of Josephson transmission lines; the groundplane is the bottom electrode of the transmission lines; the shaded areas are isolation resistors (N/N33 L)in the top electrode of the junctions, and inductors are connected between the top electrode and ground in sections 1, 2, 3, and 4. Each of these inductors has LI0<D0/2 to avoid flux trapping. Another inductor L3,6 is connected between the top electrodes of sections 3 and 6; here, LI0>D0/2. Sections 2, 3, 5, and 6 have a length approximately gj; sections 1 and 4 are about 3gj in length. Four control lines are magnetically coupled as shown. The operation of the cell is based on a bias gate. When a section of the transmission line is positively biased, a soliton will propagate; otherwise, the soliton will be stopped. The presence or absence of a circulating current in inductor L3,6 determines the bias of section 3, hence determining whether a soliton can pass through that section. A "1" is represented as a circulating current, and a "0" as no circulating current. The cell is destructive readout (DRO). (See Fig. 2.) A "1" is written into the cell by turning on IY and sending a 1 pulse through IX2.2 IY2 is also turned on. The pulse from IX generates a solit...