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Self-Aligned Electrodes to Underlying Implanted Regions

IP.com Disclosure Number: IPCOM000047524D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Koburger, CW: AUTHOR [+2]

Abstract

A process is described for forming a self-aligned electrode to an underlying implanted region. The overall process for forming such a structure is explained with reference to Figs. 1-4. The process steps are as follows: 1) Form a dielectric layer 12, such as Si3N4, having a predetermined dielectric constant and thickness, upon a silicon substrate 10. 2) Form an imaging layer 14, such as an SiO2 layer, to act as an implantation mask for the implanted regions and to act as a mask for the formation of the electrode structure. The thickness of this layer determines the maximum thickness of the electrode. 3) Form a photoresist 16 layer on layer 14 and pattern it to expose layer 14 in the areas where the electrode is desired. 4) Reactive ion etch the imaging layer 14, stopping at the surface of the dielectric layer 12.

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Self-Aligned Electrodes to Underlying Implanted Regions

A process is described for forming a self-aligned electrode to an underlying implanted region. The overall process for forming such a structure is explained with reference to Figs. 1-4. The process steps are as follows: 1) Form a dielectric layer 12, such as Si3N4, having a predetermined dielectric constant and thickness, upon a silicon substrate 10. 2) Form an imaging layer 14, such as an SiO2 layer, to act as an implantation mask for the implanted regions and to act as a mask for the formation of the electrode structure. The thickness of this layer determines the maximum thickness of the electrode. 3) Form a photoresist 16 layer on layer 14 and pattern it to expose layer 14 in the areas where the electrode is desired. 4) Reactive ion etch the imaging layer 14, stopping at the surface of the dielectric layer 12. 5) Using the patterned imaging layer 14 as an implantation mask, implant ions of predetermined materials at predetermined energies through the dielectric layer into the substrate to form the implanted regions 18 (Fig. 1). 6) Remove the photoresist material. 7) Cover the structure with a layer 20 of the material from which the electrodes are to be made, such as polycrystalline silicon. Layer 20 should preferably be at least as thick as layer 14 (Fig. 2). 8) Optionally, planarize the structure with a material such as photoresist- forming layer 22 (Fig. 3). 9) Anisotropically reactive ion etch the stru...