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Measurement Technique for Quantification of Registration Errors to a Fixed Primary Standard for Masks and Wafers Processed by Step and Repeat Lithographic Tools

IP.com Disclosure Number: IPCOM000047529D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Badami, DA: AUTHOR [+3]

Abstract

A technique is disclosed for measuring the registration errors of lithographic systems using the axial symmetry of patterns. These measurements are for the purpose of providing standards for the selection and matching of optical systems. Following are the steps used for measuring the registration errors. 1. Design a symmetric overlay having a monitor test site. 2. Generate the test site patterns on a 10X segment. Use a fused silica substrate for greater precision and accuracy. 3. Contact print this segment pattern onto another fused silica plate for checking reticle errors. 4. Use a comparator (and/or electrical tester) to measure the registration errors within the segment by rotating the segment using the symmetry of the pattern. This will provide a measurement of the reticle errors. 5. Use an enlarged (i.e.

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Measurement Technique for Quantification of Registration Errors to a Fixed Primary Standard for Masks and Wafers Processed by Step and Repeat Lithographic Tools

A technique is disclosed for measuring the registration errors of lithographic systems using the axial symmetry of patterns. These measurements are for the purpose of providing standards for the selection and matching of optical systems. Following are the steps used for measuring the registration errors. 1. Design a symmetric overlay having a monitor test site. 2. Generate the test site patterns on a 10X segment. Use a fused silica substrate for greater precision and accuracy.
3. Contact print this segment pattern onto another fused silica plate for checking reticle errors. 4. Use a comparator (and/or electrical tester) to measure the registration errors within the segment by rotating the segment using the symmetry of the pattern. This will provide a measurement of the reticle errors. 5. Use an enlarged (i.e., 10X) segment to generate a 1X mask or wafer pattern on a fused silica plate or wafers for use as a reference or standard plate or wafer. 6. Make a comparator analysis using symmetric verniers. a. Place two 1X silica substrates pattern side-to-pattern side, and align the patterns of the reference to the plate to be measured. b. After they are aligned, measure the relative pattern displacement at three or more sites for each segment to determine the overlay errors that have to be corrected by rotating...