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Browse Prior Art Database

Method for Reducing Isolation Area in an Integrated Circuit

IP.com Disclosure Number: IPCOM000047577D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Antipov, I: AUTHOR [+3]

Abstract

Boron antodoping from the buried isolation limits integrated circuit product enhancement which is obtainable by the reduced-pressure epitaxy mode of deposition. A way of reducing the boron antodoping is to reduce the buried isolation area in such a manner that the device isolation is unaffected. The present integrated circuit P+ isolation 8 involves boron diffusion everywhere except the N subcollector windows 10 and the P-minimum ring 12 around the window, as seen in Fig. 1. This typically is 50-60% of the P+ isolation area on present integrated circuits. The reduction of the isolation area, as shown in Fig. 2, where the ring of P+ isolation has a minimum width set by the ground rules, is provided. The remaining area is the P-substrate.

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Method for Reducing Isolation Area in an Integrated Circuit

Boron antodoping from the buried isolation limits integrated circuit product enhancement which is obtainable by the reduced-pressure epitaxy mode of deposition. A way of reducing the boron antodoping is to reduce the buried isolation area in such a manner that the device isolation is unaffected. The present integrated circuit P+ isolation 8 involves boron diffusion everywhere except the N subcollector windows 10 and the P-minimum ring 12 around the window, as seen in Fig. 1. This typically is 50-60% of the P+ isolation area on present integrated circuits. The reduction of the isolation area, as shown in Fig. 2, where the ring of P+ isolation has a minimum width set by the ground rules, is provided. The remaining area is the P-substrate. The P+ isolation area can thereby be reduced to 10% inside the silicon integrated circuit. The boron antodoping peak concentration has dropped to 1.5x1016 atoms/cm3 from 5- 6x1016 atoms/cm3 for this reduced new isolation area design.

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