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Method for the Direct Structuring of Magnetic Films for Vertical Magnetic Data Recording

IP.com Disclosure Number: IPCOM000047689D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Brunsch, A: AUTHOR [+2]

Abstract

By ion bombardment and subsequent etching, a continuous, magnetizable film of low-conductivity materials, such as oxide and ferrite, Fe2O3, CrO2, NiZn, is converted into a structure with vertical needles, which is suitable for vertical magnetic data recording. By being bombarded with heavy ions, solids may be used to detect fast heavy ions. Along their track, the heavy ions disturb the crystal lattice to such an extent that narrow channels may occur in the crystal. Each channel corresponds to a single heavy ion. The channels have the following characteristics: - The diameters are closely distributed and are all the same. - The adjustment of the channels, whose number is controlled as a finction of the ion dose, is independent of the respective diameter.

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Method for the Direct Structuring of Magnetic Films for Vertical Magnetic Data Recording

By ion bombardment and subsequent etching, a continuous, magnetizable film of low-conductivity materials, such as oxide and ferrite, Fe2O3, CrO2, NiZn, is converted into a structure with vertical needles, which is suitable for vertical magnetic data recording. By being bombarded with heavy ions, solids may be used to detect fast heavy ions. Along their track, the heavy ions disturb the crystal lattice to such an extent that narrow channels may occur in the crystal. Each channel corresponds to a single heavy ion. The channels have the following characteristics: - The diameters are closely distributed and are all the same. - The adjustment of the channels, whose number is controlled as a finction of the ion dose, is independent of the respective diameter. - By etching, the diameters can be accurately controlled in the range 10 nm - 100 mm. - The length/diameter ratio (aspect ratio) can be adjusted. By using this phenomenon, the continuous magnetizable film is locally disturbed by heavy ion bombardment, so that a needle structure remains after etching. The needle structure can be produced by bombardment with a relatively small ion dose, followed by long-term etching until the pores overlap (few wide channels) or by bombardment with a relatively high ion dose, followed by short-term etching (many narrow channels). In this manner, a wide optimized spectrum of needle structures can...