Browse Prior Art Database

Modified Subcollector Reoxidation Process

IP.com Disclosure Number: IPCOM000047814D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cooper, SA: AUTHOR [+2]

Abstract

The present process requires a reoxidation after the buried layer arsenic diffusion. This reoxidation process is at 150ŒC below the diffusion temperature. The result is that a substantial amount of arsenic is piled up at the silicon surface. This pile-up has detrimental effects on epitaxial growth. To eliminate this arsenic pile-up, a process was developed that utilizes a high temperature reoxidation. This process will enhance epitaxial growth by reducing arsenic autodoping concerns. This process eliminates the stress near the surface that arsenic pile-up creates. The reoxidation time is reduced by half, and the junction depth of the diffusion remains the same.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Modified Subcollector Reoxidation Process

The present process requires a reoxidation after the buried layer arsenic diffusion. This reoxidation process is at 150OEC below the diffusion temperature. The result is that a substantial amount of arsenic is piled up at the silicon surface. This pile-up has detrimental effects on epitaxial growth. To eliminate this arsenic pile-up, a process was developed that utilizes a high temperature reoxidation. This process will enhance epitaxial growth by reducing arsenic autodoping concerns. This process eliminates the stress near the surface that arsenic pile- up creates. The reoxidation time is reduced by half, and the junction depth of the diffusion remains the same.

1