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Ion Beam Sputter Deposition of Molybdenum Contacts for Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000047825D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Auret, FD: AUTHOR [+3]

Abstract

It has been found that optimum deposition and post-deposition annealing conditions exist for fabrication of p- and n-type Schottky contacts produced by ion beam sputter deposition. Rectifying contacts on n-type silicon were produced when sputtering at low voltages (700 V DC) followed by a low temperature post-deposition anneal (300ŒC). However, at high sputtering voltages (1500 V DC) the contacts were ohmic. Contacts on p-type silicon were ohmic at low sputter voltages (700 V DC) and rectifying at high sputtering voltages (1500 V DC) without post-deposition annealing. After annealing, all p-type contacts were ohmic. All depositions for p- and n-type devices were done at a constant argon ion beam current of 2.5 ma/cm2, regardless of the sputtering voltages used.

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Ion Beam Sputter Deposition of Molybdenum Contacts for Schottky Barrier Diodes

It has been found that optimum deposition and post-deposition annealing conditions exist for fabrication of p- and n-type Schottky contacts produced by ion beam sputter deposition. Rectifying contacts on n-type silicon were produced when sputtering at low voltages (700 V DC) followed by a low temperature post- deposition anneal (300OEC). However, at high sputtering voltages (1500 V DC) the contacts were ohmic. Contacts on p-type silicon were ohmic at low sputter voltages (700 V DC) and rectifying at high sputtering voltages (1500 V DC) without post-deposition annealing. After annealing, all p-type contacts were ohmic. All depositions for p- and n-type devices were done at a constant argon ion beam current of 2.5 ma/cm2, regardless of the sputtering voltages used. The wafers were held 10 cm from the molybdenum (Mo) sputtering target. The wafer and target front surfaces were parallel to each other. The argon ion beam, generated in a Kaufman-type ion source, sputtered the Mo target at an angle of 60OE to the horizontal plane. The ion source was 15 cm from the Mo target. Prior to deposition, the silicon wafers were cleaned by standard semiconductor techniques. Capacitance-voltage (C-V), Current-voltage (I-V) and Deep Level Capacitance Spectroscopy (DLTS) measurements have shown barrier heights to range from .45 to .74 V with trapping sites at .18 to .51 eV below the conduction band for n-t...