Browse Prior Art Database

Variable Tracking Transistor Device

IP.com Disclosure Number: IPCOM000047838D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Banker, DC: AUTHOR [+4]

Abstract

The device disclosed (Fig. 1) allows circuit designers to tailor transistors to meet specific applications. This is accomplished by fabricating large base resistor values within the transistor base region similar to a pinch resistor. The advantage of including the resistor within the base region is to allow good tracking with the transistor current gain when the emitter-base region is formed. The device may be adjusted to fit various resistor values by specifying the length and width of the emitter contact (level 6 in the table below) opening to form the pinch resistor. Fig. 2 shows mask levels for the device, while Fig. 3 shows a cross section of the device. The table below sets forth the mask level relationship to the structure of the device as represented in Fig. 2.

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Variable Tracking Transistor Device

The device disclosed (Fig. 1) allows circuit designers to tailor transistors to meet specific applications. This is accomplished by fabricating large base resistor values within the transistor base region similar to a pinch resistor. The advantage of including the resistor within the base region is to allow good tracking with the transistor current gain when the emitter-base region is formed. The device may be adjusted to fit various resistor values by specifying the length and width of the emitter contact (level 6 in the table below) opening to form the pinch resistor.

Fig. 2 shows mask levels for the device, while Fig. 3 shows a cross section of the device. The table below sets forth the mask level relationship to the structure of the device as represented in Fig. 2. Mask level Description 1 Subcollector diffusion 2 Isolation diffusion 3 Recessed Oxide Isolation (ROI) 4 Collector Reach-through diffusion 5 Base diffusion 6 "All-contacts" opening 7 Emitter contact 8 Base contact

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