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Magnetron Lift-Off Process With Tapered Sidewalls

IP.com Disclosure Number: IPCOM000047917D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lange, DJ: AUTHOR [+3]

Abstract

A magnetron lift-off process can be used to provide 45Ĺ’tapered conductor sidewalls with a standoff layer less than 3000 thick. The procedure of the lift-off process is outlined below: 1. Sputter or evaporate a standoff layer of 1000-3000 thickness. The standoff layer may be, for example, chromium. 2. Apply resist. 3. Expose and develop the resist. 4. Plasma harden the resist with CF4 and O2 . 5. Bake the resist. 6. Etch the standoff layer with a wet etching technique to provide 2000-5000 resist overhang. 7. Deposit metal film from 300 to 6000 in magnetron with 100-200 SiO2 protection layer. The metal film shall not react or react very slowly with the etchant used Al-Cu and NiFe alloy may be used. 8. Lift-off photoresist with acetone ultrasonic bath. 9.

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Magnetron Lift-Off Process With Tapered Sidewalls

A magnetron lift-off process can be used to provide 45OEtapered conductor sidewalls with a standoff layer less than 3000 thick. The procedure of the lift-off process is outlined below: 1. Sputter or evaporate a standoff layer of 1000-3000 thickness. The standoff layer may be, for

example, chromium. 2. Apply resist. 3. Expose and develop the resist. 4. Plasma harden the resist with CF4 and O2 . 5. Bake the resist. 6. Etch the standoff layer with a wet etching technique to provide 2000-5000 resist overhang. 7. Deposit metal film from 300 to 6000 in magnetron with 100-200 SiO2 protection layer. The metal film

shall not react or react very slowly with the etchant used

Al-Cu and NiFe alloy may be used. 8. Lift-off photoresist with acetone ultrasonic bath. 9. The final standoff layer is then etched away by using a dry or wet etching technique.

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