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Browse Prior Art Database

Shaped Siloxane Process

IP.com Disclosure Number: IPCOM000048009D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Gillespie, SJ: AUTHOR

Abstract

This article describes a process for reactive ion etching (RIE) structures to produce images having controlled etching slopes. It uses a double-layer resist system wherein the upper layer is profiled to produce the desired etching slope. Double-layer lithographic techniques have been used for high resolution imaging. One prior-art process includes the steps of hard-baking a lower layer of AZ resist, imaging a thin siloxane upper layer and transferring the upper layer image into the lower layer by O2 RIE. The resulted resist structure has vertical sidewalls, and the image transferred into the substrate following the RIE processing step also has vertical sidewalls. However, there are applications which require non-vertical sidewalls, such as structures prior to oxide or metal deposition.

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Shaped Siloxane Process

This article describes a process for reactive ion etching (RIE) structures to produce images having controlled etching slopes. It uses a double-layer resist system wherein the upper layer is profiled to produce the desired etching slope. Double-layer lithographic techniques have been used for high resolution imaging. One prior-art process includes the steps of hard-baking a lower layer of AZ resist, imaging a thin siloxane upper layer and transferring the upper layer image into the lower layer by O2 RIE. The resulted resist structure has vertical sidewalls, and the image transferred into the substrate following the RIE processing step also has vertical sidewalls. However, there are applications which require non-vertical sidewalls, such as structures prior to oxide or metal deposition. This article describes a modification of the prior-art process described above to provide etched images in a substrate with the needed sidewall slopes. This modified process includes the following steps described with reference to the above drawing. (a) Spin-coating a lower AZ resist layer 12, having a thickness that can be on the order of 2 mm, on a substrate

10. This layer does not need to be hard-baked since it is

not used as the primary etching mask for etching the

substrate. (b) Forming a siloxane layer 14, having a thickness

suitable for forming the desired profile (for example, on

the order of 5,000 ) on top of the AZ resist layer. (c) Imaging the sil...