Browse Prior Art Database

Buried Contact Process

IP.com Disclosure Number: IPCOM000048012D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Mohler, RL: AUTHOR [+2]

Abstract

This article describes a process for making a buried contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate, as described in U.S. Patent 4,341,009, which further includes the formation of a polycide structure for the buried electrode, and control of buried contact diffusion doping independent of the polysilicon doping. The general purpose of the process is to form a buried contact on the substrate without leaving any residue and/or silicon dioxide in the contact "window" which affects the contact resistance of the electrode. The process includes the following steps described with reference to the figures: 1. Forming a silicon dioxide layer 12 over the silicon substrate 10 (Fig. 1). 2.

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Buried Contact Process

This article describes a process for making a buried contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate, as described in U.S. Patent 4,341,009, which further includes the formation of a polycide structure for the buried electrode, and control of buried contact diffusion doping independent of the polysilicon doping. The general purpose of the process is to form a buried contact on the substrate without leaving any residue and/or silicon dioxide in the contact "window" which affects the contact resistance of the electrode. The process includes the following steps described with reference to the figures: 1. Forming a silicon dioxide layer 12 over the silicon substrate 10 (Fig. 1). 2. Forming a polycrystalline silicon layer 14 over the silicon dioxide layer 12. 3. Forming a photoresist layer 16 over the

polycrystalline silicon layer with an opening where the

electrical contact is to be made to the substrate. 4. Etching the polycrystalline silicon layer through the opening in the photoresist mask to form a corresponding

opening in the polycrystalline silicon for the contact

region (Fig. 2). 5. Removing the photoresist layer 16, and then etching the silicon dioxide layer 12 through the opening in the

polycrystalline layer 14 to form a corresponding opening in

the silicon dioxide layer. 6. Making, through diffusion or ion-implantation, a portion of the substrate conductive to form a co...