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Source Compounds for CVD Silicon Depositions

IP.com Disclosure Number: IPCOM000048081D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+3]

Abstract

With increasing trends toward larger wafer processing and smaller circuits new approaches to thin film poly- or epi- silicon deposition will be required to solve some of the problems associated with the production of advanced semiconductor devices. Some of the new directions required are: (1) New methods and approaches to the epitaxial growth of silicon at low temperatures i.e., lower than 1000 degrees C, and pressures. (2) Development of dopant source compounds which provide more uniform doping of epi and especially polysilicon layers, either because of their reactivity with other gases present in the deposition process has been reduced or because the dopants are already attached to silicon atoms in the source molecule.

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Source Compounds for CVD Silicon Depositions

With increasing trends toward larger wafer processing and smaller circuits new approaches to thin film poly- or epi- silicon deposition will be required to solve some of the problems associated with the production of advanced semiconductor devices. Some of the new directions required are:
(1) New methods and approaches to the epitaxial growth of silicon

at low temperatures i.e., lower than 1000 degrees C, and

pressures.
(2) Development of dopant source compounds which provide more

uniform doping of epi and especially polysilicon layers,

either because of their reactivity with other gases

present in the deposition process has been reduced or

because the dopants are already attached to silicon

atoms in the source molecule. In the latter case, less

diffusion of the dopant might be expected on deposition.

For low temperature epitaxial processes earlier work has focus focused on the higher silanes and silicon iodide processes. The latter processes tend to be closed-tube transport reactions. Compounds which can be synthesized and are amenable to open-tube deposition, which is the desired method, at reduced pressures and temperatures, must have reasonably high vapor pressures and stabilities over normal process operating conditions. There are a number of such compounds which fall into the following classes given.

A particularly useful combination, which comes under the solution of problem
(2) cited above, is that of dopant an...