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Browse Prior Art Database

Heterostructure Long Lifetime Hot Electron Transistor

IP.com Disclosure Number: IPCOM000048084D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Dumke, WP: AUTHOR [+3]

Abstract

An n-n-n heterojunction hot electron transistor is provided wherein hot electrons are injected from wide gap to narrow gap material (e.g., GaAs to Ge). A reverse biased (wide gap material positive) heterojunction will behave as a blocking contact much the same way as in Schottky barriers. The band edge discontinuities (thus the barrier heights) of the heterostructures will be determined by the composition and/or orientation of the materials.

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Heterostructure Long Lifetime Hot Electron Transistor

An n-n-n heterojunction hot electron transistor is provided wherein hot electrons are injected from wide gap to narrow gap material (e.g., GaAs to Ge). A reverse biased (wide gap material positive) heterojunction will behave as a blocking contact much the same way as in Schottky barriers. The band edge discontinuities (thus the barrier heights) of the heterostructures will be determined by the composition and/or orientation of the materials.

The energy relaxation time of the hot electrons in semiconductors depends critically on the band structures of the material and the energy of the electrons. For semiconductors with high energy subsidiary valleys, the hot electron with energy higher than these valleys will have a relatively long relaxation time of the order of 10/-11/sec.

The n-n-n heterojunction hot electron transistor structure operates in much the same way as a bipolar transistor. Fig. 1 shows a schematic band diagram of the device structure. The emitter (E) and base (B) junction has a discontinuity larger than the energy separation between the lowest conduction band edge and the subsidiary valleys. The base (B) to collector (C) junction has a discontinuity smaller than this energy separation. When the E-B junction is forward biased, the injected electrons are above the subsidiary valleys. Most of these electrons drift through the base and are collected by the B-C junction because of their relatively long relaxation time in the subsidiary valleys and th...