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Stable GaAs MOSFET

IP.com Disclosure Number: IPCOM000048085D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

DiMaria, DJ: AUTHOR

Abstract

In order to fabricate a GaAs MOSFET (metal oxide semiconductor field effect transistor), a stable gate insulator fabricated using low temperature processing is needed. Such a process will minimize As out diffusion and therefore the deterioration of the GaAs insulator interface of the channel region of the MOSFET. Attempts to fabricate such an insulating layer for the channel region until the present have not been very successful due to the high number of surface states at the GaAs insulator interface. These surface states caused by As out diffusion have limited the performance of such devices.

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Stable GaAs MOSFET

In order to fabricate a GaAs MOSFET (metal oxide semiconductor field effect transistor), a stable gate insulator fabricated using low temperature processing is needed. Such a process will minimize As out diffusion and therefore the deterioration of the GaAs insulator interface of the channel region of the MOSFET. Attempts to fabricate such an insulating layer for the channel region until the present have not been very successful due to the high number of surface states at the GaAs insulator interface. These surface states caused by As out diffusion have limited the performance of such devices.

The device described here should minimize the degradation in the channel conductance caused by surface states and minimize the creation of these surface states. The channel and gate insulator regions are formed in the following way for this structure:

1. A shallow implant of the appropriate ions to form either a buried n- or p- channel type device is used to move the conducting channel away from the GaAs insulator interface.

2. A very low temperature process to form an impermeable insulator (to As out-diffusion), such as Si(3)N(4), is then deposited on top of the implanted channel. This layer could be formed by depositing an insulator, such as Si/3/N/4/, at less than or approximately 100 degree C from a photo- decomposition or plasma induced chemical vapor deposition reaction of gaseous SiH(4) and NH(3). This reaction could be accomplished "up-stream" fro...