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Composite Temperature Compensated Resistor

IP.com Disclosure Number: IPCOM000048155D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Anantha, NG: AUTHOR [+4]

Abstract

A semiconductor composite resistor having a zero temperature coefficient, or other predetermined positive or negative valued temperature coefficient, is fabricated through the use of diffusion and polycrystalline silicon deposition techniques.

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Composite Temperature Compensated Resistor

A semiconductor composite resistor having a zero temperature coefficient, or other predetermined positive or negative valued temperature coefficient, is fabricated through the use of diffusion and polycrystalline silicon deposition techniques.

Ordinary diffused resistors are very temperature sensitive. In general, their resistance increases with temperature; i.e., the temperature coefficient of resistance is positive.

The sheet resistance of typically doped polycrystalline silicon deposited on oxide can be made to be approximately one third the value of a diffused resistor. Such polycrystalline silicon, however, has a negative temperature coefficient of resistance.

By properly selecting dopant concentration and dimensions, poly resistors can be designed to have a resistance value equivalent to that of a given diffused resistor over a given temperature range. Two resistors comprising a composite resistor can be integrated in parallel (fig. 1) or in series (Fig. 2) relationship to yield the desired sheet resistance and temperature coefficient. Desired values within a range of positive or negative temperature coefficients of resistance values also may be achieved for the composite resistor by tailoring the dopant and dimensional parameters of the individual resistors.

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