Browse Prior Art Database

Method to Fabricate High Performance Lateral on Junction Devices

IP.com Disclosure Number: IPCOM000048159D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 68K

Publishing Venue

IBM

Related People

Anantha, NG: AUTHOR [+2]

Abstract

A high performance, shallow collector junction, lateral PNP transistor is made by use of sidewall oxide and Schottky contact techniques whereby very narrow base width and small collector resistance are achieved.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Method to Fabricate High Performance Lateral on Junction Devices

A high performance, shallow collector junction, lateral PNP transistor is made by use of sidewall oxide and Schottky contact techniques whereby very narrow base width and small collector resistance are achieved.

N+ subcollector 1 is placed into P substrate 2 (Fig. 1), and the structure is covered by N- epi 3. The semiconductor pocket is isolated by deep dielectric trench 4. Shallow dielectric trench 5 reaches into subcollector 1 to separate base contact region 6 from the Schottky collector region to be formed later. An N+ reach-through diffusion is made in base contact region 6. P doped polysilicon and a layer of oxide are deposited over the structure and etched so as to provide polysilicon mesa 7 covered by oxide 8.

Approximately 3000 A of CVD (chemical vapor deposited) oxide is deposited over the device of Fig. 1 and then reactively ion etched to leave the oxide sidewall ring 9 (Fig. 2) about mesa 7. All of the CVD oxide is removed from the horizontal surfaces as a result of the reactive ion etching process. The lateral PNP transistor is completed by opening a contact hole through the oxide 8 and depositing contact metal (such as aluminum) which forms a Schottky collector contact in region 10 (Fig. 3) and ohmic contacts in emitter region 7 and in base region 6.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]