Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Resistor Capacitor Combination

IP.com Disclosure Number: IPCOM000048183D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Bhatia, HS: AUTHOR [+4]

Abstract

A vertical resistor capacitor combination is provided in an integrated semiconductor device. The vertical capacitor is formed between an N+ reach-through implant 1 and a P+ implant 2 into an N-epi layer 3 on a P substrate (not shown).

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Resistor Capacitor Combination

A vertical resistor capacitor combination is provided in an integrated semiconductor device. The vertical capacitor is formed between an N+ reach- through implant 1 and a P+ implant 2 into an N-epi layer 3 on a P substrate (not shown).

An N+ subcollector (not shown) is placed in the P substrate underneath all regions of the N+ reach-through implant which regions extend downward into contact with the subcollector. The P+ implant 2 does not extend down into contact with the subcollector but is separated from it by the N-epi layer.

The resistor 4 is formed by an extension of the P+ implant and is placed into a parallel relationship with the vertical capacitor by means of grounded contact 5 and contact 6. The subcollector also is grounded to complete the paralleled resistor capacitor connection.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]