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Scavenger Sodium Ions in Field Effect Transistors

IP.com Disclosure Number: IPCOM000048331D
Original Publication Date: 1982-Jan-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Sacher, E: AUTHOR

Abstract

Sodium ions which are present in polymers drift under applied fields. If these ions are permitted to diffuse into field-effect transistors (FETs), the FETs no longer function properly.

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Scavenger Sodium Ions in Field Effect Transistors

Sodium ions which are present in polymers drift under applied fields. If these ions are permitted to diffuse into field-effect transistors (FETs), the FETs no longer function properly.

It is very difficult to obtain solution-cast polymers which do not have any sodium contamination. It is therefore desirable to have a technique whereby the sodium contamination in a polymer will not cause degradation of FETs.

Multidentate, macrocyclic materials, such as crown ethers and cryptands, can complex alkali metals. By incorporating such materials into polymers which are used with FETs, the ability of any sodium ions to migrate is reduced. These materials can be incorporated into the polymer either as a separate entity or as part of the polymer chain.

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