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Semiconductor Polishing Composition

IP.com Disclosure Number: IPCOM000048348D
Original Publication Date: 1982-Jan-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Mendel, E: AUTHOR

Abstract

This polishing slurry composition for polishing semiconductor wafers includes an aqueous colloid of silica, a metal carbonate, an oxidizing agent, and an alkali metal hydroxide to adjust the pH. The specific slurry composition includes: Na(2)CO(3)H(2)O/4OL - 450 gm. Wt.% of SiO(2) - 7.5 to 10

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Semiconductor Polishing Composition

This polishing slurry composition for polishing semiconductor wafers includes an aqueous colloid of silica, a metal carbonate, an oxidizing agent, and an alkali metal hydroxide to adjust the pH. The specific slurry composition includes:

Na(2)CO(3)H(2)O/4OL - 450 gm.

Wt.% of SiO(2) - 7.5 to 10

The pH is adjusted to 11.5 with NaOH, or KOH addition. The polishing slurry composition permits increased polishing rates, and 5 mil/hr. at 2.5 psi has been observed. The slurry is also resistant to coagulation.

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