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Browse Prior Art Database

Gate-Controlled Silicon-Controlled Rectifier Cell

IP.com Disclosure Number: IPCOM000048551D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Bergeron, DL: AUTHOR

Abstract

A PNPN diode is formed with a lateral PNP transistor providing most transistor action at the surface of a semiconductor substrate merged with a vertical NPN transistor which does not require the use of the substrate for electrical purposes, as described more fully in the preceding article, with a field-effect transistor (FET) as a control element.

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Gate-Controlled Silicon-Controlled Rectifier Cell

A PNPN diode is formed with a lateral PNP transistor providing most transistor action at the surface of a semiconductor substrate merged with a vertical NPN transistor which does not require the use of the substrate for electrical purposes, as described more fully in the preceding article, with a field- effect transistor (FET) as a control element.

In most silicon-controlled rectifier (SCR) designs, the gate is a contact to the base region 18 of the NPN transistor having regions 16, 18 and 20, and the "on" or "off" condition is determined by the absence or presence of base current.

In the first structure illustrated in Fig. 1, further control of the PNPN diode is provided by forming an with metal gate 22 disposed between regions 10 and 14 and insulated from regions 10, 12 and 14 by a suitable insulating layer 24, such as silicon dioxide. Since the collector, region 10, of the PNP transistor is effectively also the NPN base region 18, turning the FET "on" or "off" will source or not source base current to the NPN transistor, resulting in the silicon- controlled rectifier being "off" or "on", respectively.

In a second structure illustrated in Fig. 2, all elements remain the same as those of the structure of Fig. 1 except that the metal gate 22' is connected to the base region 18 of the NPN transistor through region 10. This arrangement results effectively in a self-biased silicon controlled rectifier where the SCR t...