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Enhanced Thermal Stability Of Simplified Lift-Off Structures

IP.com Disclosure Number: IPCOM000048584D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Field, CB: AUTHOR [+3]

Abstract

Simplified lift-off structures, such as those generated by the chlorobenzine soak process or the like, are incompatible with energetic cleaning processes, such as sputter cleaning or ashing, used tor educe metal to silicon or metal to metal cotact resistance. This is a result of the thermal instability of the photoresist lift-off structure once temperatures of greater than or equal to 95 degrees C are achieved and photoresist reflow occurs.

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Enhanced Thermal Stability Of Simplified Lift-Off Structures

Simplified lift-off structures, such as those generated by the chlorobenzine soak process or the like, are incompatible with energetic cleaning processes, such as sputter cleaning or ashing, used tor educe metal to silicon or metal to metal cotact resistance. This is a result of the thermal instability of the photoresist lift-off structure once temperatures of greater than or equal to 95 degrees C are achieved and photoresist reflow occurs.

The addition of an organic base to the photoresist system suppresses the reflow characteristics of the system, and temperatures of More Than or equal To 115 Degrees C may be used without adversely affecting the system. This increase in reflow temperature permits utilization of energetic cleaning processes to achieve lower contact resistance. Examples of useful organic bases are imidazole and imidazole derivatives.

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