Browse Prior Art Database

Process For Producing Dielectrically Isolated Single Crystal Silicon

IP.com Disclosure Number: IPCOM000048590D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Chu, WK: AUTHOR [+3]

Abstract

By this process monocrystalline silicon regions embedded in a dielectric substrate can be produced.

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Process For Producing Dielectrically Isolated Single Crystal Silicon

By this process monocrystalline silicon regions embedded in a dielectric substrate can be produced.

In this process a thick dielectric layer, such as S10(2), Si(3)N(4), etc., supported on a suitable substrate, is masked with a suitable mask 12 and subjected to reactive ion etching, as indicated in Fig. 1. The resultant substrate has indentations 14, as shown in Fig. 2. The depth of the indentations 14 is typically in the range of 10 A to a few microns. As indicated in Fig. 3, a doped or undoped layer 16 of polycrystalline silicon is deposited on the surface, filling indentations 14. The surface of the substrate is planarized as by grinding, polishing, or etching, as indicated in Fig. 4, and the resultant regions 18 converted to monocrystalline silicon by the application of scanning laser, E- beam, or thermal annealing.

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