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Browse Prior Art Database

Sidewall Technology Containing Thermal Silicon Nitride

IP.com Disclosure Number: IPCOM000048596D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Riseman, J: AUTHOR

Abstract

Thin films of silicon nitride (Si(3)N(4)) may be thermally grown on silicon from an N(2)/NH(3) ambient by heat treatment at about 1000 degrees C, with or without a plasma. This process can be applied to a sidewall process as follows: 1. A polysilicon layer 10 is deposited upon a silicon monocrystalline substrate 11. A silicon dioxide layer 12 is formed by chemical vapor deposition (CVD) or thermally on the layer 10. Lithography and etching techniques are used to pattern the layers 10 and 12, as desired (Fig. 1). The resulting sides of the layers 10 and 12 are substantially vertical. 2. A Si(3)N(4) layer 13 is thermally grown, as described above, on the polysilicon and single crystal surfaces (Fig. 2). 3. A CVD silicon dioxide layer 14 is formed over the surfaces.

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Sidewall Technology Containing Thermal Silicon Nitride

Thin films of silicon nitride (Si(3)N(4)) may be thermally grown on silicon from an N(2)/NH(3) ambient by heat treatment at about 1000 degrees C, with or without a plasma. This process can be applied to a sidewall process as follows:
1. A polysilicon layer 10 is deposited upon a silicon

monocrystalline substrate 11. A silicon dioxide layer 12 is

formed by chemical vapor deposition (CVD) or thermally on the

layer 10. Lithography and etching techniques are used to

pattern the layers 10 and 12, as desired (Fig. 1). The

resulting sides of the layers 10 and 12 are substantially

vertical.
2. A Si(3)N(4) layer 13 is thermally grown, as described above,

on the polysilicon and single crystal surfaces (Fig. 2).
3. A CVD silicon dioxide layer 14 is formed over the surfaces.

A reactive ion etching (RIE) process is then used to

substantially remove the layer 14 from all horizontal surfaces

while substantially leaving the layer 14 on the vertical

surfaces (Fig. 3).

The silicon nitride layer 13 is about 100 Angstroms thick and is removed from the horizontal surface during the RIE of the silicon dioxide 14 to form the sidewall. The remaining Si(3)N(4) layer is too thin to generate defects in the silicon that it directly contacts.

A variation of this process is to use a metal silicide or silicon/metal silicide instead of only polysilicon. The metal silicide is nitrided thermally and sidewall insulation formed by CVD and RIE,...