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High Resolution Electron Beam Monomolecular Resist Materials Containing Sites of Unsaturation

IP.com Disclosure Number: IPCOM000048763D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 3 page(s) / 20K

Publishing Venue

IBM

Related People

Brown, C: AUTHOR [+4]

Abstract

The use of monomolecular resists for E-beam microlithography has been described by Barraud, Rosilio and Ruaudel-Teixier in France (e.g., Solid State Technology 22 (8), 120-124 (1979), in their article "Monomolecular Resists: A new Class of High Resolution Resists for Electron Beam Microlithography").

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High Resolution Electron Beam Monomolecular Resist Materials Containing Sites of Unsaturation

The use of monomolecular resists for E-beam microlithography has been described by Barraud, Rosilio and Ruaudel-Teixier in France (e.g., Solid State Technology 22 (8), 120-124 (1979), in their article "Monomolecular Resists: A new Class of High Resolution Resists for Electron Beam Microlithography").

Described here is the use of ultrathin (2.5 to approximately 100 nm thick) resist materials built up from monomolecular films, which are to be used as high- resolution electron-beam resists in application to, among others, trilevel structures (see, e.g., Moran and Maydan, "Device Patterning Using the Trilevel Technique." in Technical Papers from the Regional Technical Conference Photopolymers: Principles, Processes and Materials, Society of Plastics Engineers, Mid-Hudson Section, Ellenville, New York, October 10-12. 1979.) and chrome mask formation. These monolayer resist materials are derived from emphiphilic materials which have the known property of forming monomolecular films at a liquid/gas interface and of being transferrable to solid substrates via the Langmuir-Blodgett method. The specific feature of the materials consists in that they contain one or more sites of unsaturation at some point in that they contain one The general formula for the subject materials is: (see original) and the total number of carbon atoms in the alkane chain is at least 16 and less than 35.

The site of unsaturation is preferably either in the ester group, in the alkane chain immediately adjacent to the carboxyl group, or in the alkane chain at the position Omega to the carboxyl group.

The basic feature of monomolecular films which makes resist materials of the general type well suited for use in lithography is their semicrystalline nature when the variables in the general formula given above are chosen judiciously. The resultant well-ordered, solid structure (1) mak...