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Final Passivation of Semiconductors

IP.com Disclosure Number: IPCOM000048765D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Clark, HA: AUTHOR [+2]

Abstract

In this process, a fluorocarbon film is provided to passivate semi-conductors and/or reactively ion etched aluminum metallurgy.

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Final Passivation of Semiconductors

In this process, a fluorocarbon film is provided to passivate semi-conductors and/or reactively ion etched aluminum metallurgy.

Reactive ion etching is a preferred method of forming electrical conductors on semiconductor devices from a blanket layer of metal. The metal is masked by a suitable photoresist, a pattern exposed and developed, and the substrate reactively ion etched using a chlorine, fluorine or other reactive specie. While the reactive ion etching process efficiently shapes the metal, i.e., aluminum or aluminum-copper, byproducts are deposited which, when combined with moisture, can later corrode the metallurgy.

Following the etching process, and while still in a vacuum, the resist is conventionally removed by plasma ashing. In this improved process, the substrate, without removing from the vacuum chamber, is subjected to a plasma of CF(4), CF(4)+H(2), C(2)F(6), C(3)F(8), or other fluorocarbon gasses, alone or in combination, which results in the formation of a passivating film approximately 500 - 1000 A in thickness. This film will completely repel moisture and other contaminants and will completely seal off metallurgy from the possibility of corrosion. The same type of film can be used to render completed semiconductor devices impervious to moisture.

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