Browse Prior Art Database

Low Barrier Schottky Barrier Diode With Improved Stability And Electromigration Performance

IP.com Disclosure Number: IPCOM000048766D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Lloyd, JR: AUTHOR [+4]

Abstract

Titanium-tungsten has been found to produce stable low barrier Schottky diodes. When joined to conductive metallurgy, particularly aluminum, a barrier layer is required to prevent the reaction of the titanium tungsten with the aluminum which would degrade the Schottky diode. Chromium has been found to be an excellent metallurgy as a barrier layer. Chromium also protects the titenium-tungsten against electromigration effects.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Low Barrier Schottky Barrier Diode With Improved Stability And Electromigration Performance

Titanium-tungsten has been found to produce stable low barrier Schottky diodes. When joined to conductive metallurgy, particularly aluminum, a barrier layer is required to prevent the reaction of the titanium tungsten with the aluminum which would degrade the Schottky diode. Chromium has been found to be an excellent metallurgy as a barrier layer. Chromium also protects the titenium-tungsten against electromigration effects.

In the drawing, a small amount of titanium-tungsten 10, e.g., 100 angstroms, is suitably deposited in an opening 12 of an insulating layer 14. Preferably, the titanium-tungsten is sputtered in a very short and fast operation. The excess titanium-tungsten is removed by reactive ion etching. The reactive ion etching can be accomplished in a reletively short time, if necessary at all, reducing the chance of related contamination and/or corrosion of the titanium-tungsten.

A chromium layer 16 of approximately 1000 angstroms deposited by standard processes as a diffusion-electromigration barrier. The chromium is deposited and configured by standard lift-off processes.

A layer of aluminum doped with copper 18 is deposited and configured by standard processes to complete the metallurgy for the low barrier Schottky diode connection to a suitably doped substrate 20.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]