Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Low Barrier Schottky Process With Ion Implanted Emitters

IP.com Disclosure Number: IPCOM000048777D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Forney, GB: AUTHOR

Abstract

After ion implantation of emitters and other N+ contacts 1, approximately 20-30 nm of screen silicon dioxide 2 remains in all contact regions 3-7, as indicated in the figure. Prior to evaporation of high barrier metal, a non-critical mask is applied to etch the screen dioxide from the emitter 3, base 4, collector 5, and high barrier Schottky anode 6 areas. This mask retains the screen dioxide in the low barrier Schottky anode 7, which inhibits the formation of high barrier silicide in this contact. Prior to low barrier metal evaporation, the screen dioxide is removed with an etch without a mask. Then low barrier silicide is formed, completing the low barrier Schottky structure.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Low Barrier Schottky Process With Ion Implanted Emitters

After ion implantation of emitters and other N+ contacts 1, approximately 20- 30 nm of screen silicon dioxide 2 remains in all contact regions 3-7, as indicated in the figure. Prior to evaporation of high barrier metal, a non-critical mask is applied to etch the screen dioxide from the emitter 3, base 4, collector 5, and high barrier Schottky anode 6 areas. This mask retains the screen dioxide in the low barrier Schottky anode 7, which inhibits the formation of high barrier silicide in this contact. Prior to low barrier metal evaporation, the screen dioxide is removed with an etch without a mask. Then low barrier silicide is formed, completing the low barrier Schottky structure.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]