Browse Prior Art Database

Quartz Trench RIE Etch Stop

IP.com Disclosure Number: IPCOM000048782D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Boyar, S: AUTHOR [+4]

Abstract

For multilayer metal interconnections in semiconductor devices, the quartz insulator surrounding the metal via-studs (connector) can be attacked severely during next quartz layer trench RIE (reactive ion etching).

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Quartz Trench RIE Etch Stop

For multilayer metal interconnections in semiconductor devices, the quartz insulator surrounding the metal via-studs (connector) can be attacked severely during next quartz layer trench RIE (reactive ion etching).

As shown in the drawing, a thin layer, 1000 Angstroms, of another insulator MgO was formed between two quartz layers, serving as an etch stop for the upper layer trench RIE operation.

Quartz trench RIE can be achieved in a gas mixture of CF(4) and O(2) in which the etch,rate of MgO is less than 20 Angstroms/min. as opposed to an etch rate of approximately 500 Angstroms/min. for quartz. C 02-320, 02-010, 02-050.

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