Browse Prior Art Database

Dielectric Defect Detector

IP.com Disclosure Number: IPCOM000048790D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Ormond, DW: AUTHOR

Abstract

The dielectric defect detector apparatus shown above allows the application of an electric field across a dielectric film, such as Si(3)N(4), which is on a silicon substrate. The applied voltage (+) to the copper screen (grid) 5 is always greater than the reference voltage 6 due to the voltage drop through the electrolyte 7, such as methanol. An O-ring 8 retains the screen 5 in place. The reference voltage is measured by using a platinum probe 9 that is placed directly on the dielectric's surface on silicon wafer 10. The silicon wafer or substrate 10 is held to a copper piece 11 having a gold plating thereon to electrically contact the substrate 10. The upper member containing the copper screen 5 and electrolyte 7 is held against the dielectric layer side of the substrate 10 and sealed thereto by O-ring 12.

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Dielectric Defect Detector

The dielectric defect detector apparatus shown above allows the application of an electric field across a dielectric film, such as Si(3)N(4), which is on a silicon substrate. The applied voltage (+) to the copper screen (grid) 5 is always greater than the reference voltage 6 due to the voltage drop through the electrolyte 7, such as methanol. An O-ring 8 retains the screen 5 in place. The reference voltage is measured by using a platinum probe 9 that is placed directly on the dielectric's surface on silicon wafer 10. The silicon wafer or substrate 10 is held to a copper piece 11 having a gold plating thereon to electrically contact the substrate 10. The upper member containing the copper screen 5 and electrolyte 7 is held against the dielectric layer side of the substrate 10 and sealed thereto by O-ring 12.

Depending upon the (1) distance of the copper screen 5 from the substrate 10, (2) the type of dielectric layer, and (3) the thickness of the dielectric layer, the reference voltage at the surface of the dielectric will vary. In general, the closer the screen is to the dielectric layer, the better the dielectric is as an insulator, and the thicker the dielectric layer, the closer the reference voltage will approach the applied voltage.

This apparatus has been used to measure the pin hole density of RF plasma-deposited Si(3)N(4), for thicknesses between 5500-7000 Angstroms, as a function of applied field, between 0-100 volts. Copper io...