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Post Exposure Baking For Improved Photoresist Adhesion

IP.com Disclosure Number: IPCOM000048794D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Barry, J: AUTHOR [+2]

Abstract

The adhesion of E-beam novolak resists (e.g., Shipley AZ-1350J) is tenuous on difficult surfaces, such as plasma nitride (e.g., Si(3)N(4)).

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Post Exposure Baking For Improved Photoresist Adhesion

The adhesion of E-beam novolak resists (e.g., Shipley AZ-1350J) is tenuous on difficult surfaces, such as plasma nitride (e.g., Si(3)N(4)).

It was found that a novel post exposure sequence of bakes in conjunction with interrupt development eliminates adhesion problems in conjunction with use of adhesion promoters, such as bis(trimethylsilyl) trifluoroacetamide (BSTFA) and hexamethyl disilane (HMDS).

The substrate may be precoated with BSTFA followed by the application of the resist and E-beam exposure. Immediately after exposure, the substrate is post-baked at about 85 degrees C for about 15 minutes. The substrate is immersed in a developer (e.g., AZ 351) for induction of the exposed regions (e.g., 2 1/2 minutes, 23 Degrees C), rinsed, dried, and given a second post bake again at about 85 degrees C for about 15 minutes. The substrate is again immersed in the developer to completion.

This post exposure and development interruption was found to significantly increase the adhesion of the resist to the plasma nitride. The investigation indicates applicability to the improvement of resist adhesion to other surfaces, such as SiO(2), quartz, glass, phosphosilicate glass, and the like.

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