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Dielectric Breakdown Identification For Very Large Scale Integration

IP.com Disclosure Number: IPCOM000048799D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Carballo, RA: AUTHOR [+2]

Abstract

In order to do failure analysis of a shorted array or circuit in a silicon chip, first it is required to define the exact location of the defective cell or gate. Present techniques use liquid crystal solutions, which involve long and complicated sample preparation, to identify tify general areas, within 20 to 40 Mum in diameter, where the defect is located. The improved technique allows the user to identify the exact location within 1 Mum radial area so an exact cross-sectional analysis can be done for the defect characterization. This technique is important for interlevel shorts In double polysilicon structures or to highlight the weak design areas on newly released designs.

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Dielectric Breakdown Identification For Very Large Scale Integration

In order to do failure analysis of a shorted array or circuit in a silicon chip, first it is required to define the exact location of the defective cell or gate. Present techniques use liquid crystal solutions, which involve long and complicated sample preparation, to identify tify general areas, within 20 to 40 Mum in diameter, where the defect is located. The improved technique allows the user to identify the exact location within 1 Mum radial area so an exact cross- sectional analysis can be done for the defect characterization. This technique is important for interlevel shorts In double polysilicon structures or to highlight the weak design areas on newly released designs.

This technique is accomplished by using a microprobing stage with a high- power microscope to view the area to be tested. The microprobes are to contact the pads so a controlled current can be forced through the disrupted film. An alcohol solution is spread on the area to be detected so that the low temperature boiling effect will be visible on top of the defective area. While the current is high enough to boil the alcohol solution, bubbling gives the direct location of the defective area. Alcohol or similar low boiling point liquid may be used. Adding a dye to the alcohol enhances the bubbling spots on the defective chips.

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