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Oxygen Plasma Passivation of Al-Cu Metallizations

IP.com Disclosure Number: IPCOM000048804D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Meyer, A: AUTHOR [+4]

Abstract

The number of defects of missing metal on Al-Cu metallizations can be substantially reduced by exposing the Al-Cu surface after evaporation Al-CU to an oxygen plasma to form a passivating layer thereon.

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Oxygen Plasma Passivation of Al-Cu Metallizations

The number of defects of missing metal on Al-Cu metallizations can be substantially reduced by exposing the Al-Cu surface after evaporation Al-CU to an oxygen plasma to form a passivating layer thereon.

Notch-like defects of missing metal have been observed on Al-Cu metallizations. The defects were not present after evaporation but after the subsequent liftoff process using nmethylpyrrolidone as a liftoff solvent at a temperature of 135 degrees C for at least 2 hours followed by 2 times 10 min. J 100 (Indust-Ri-Chem Laboratory, Richardson, Texas) treatment at 95 degrees
C.

The defects are avoided, or substantially reduced, by exposing the Al-Cu surface in the evaporator after the evaporation of Al-Cu to an oxygen plasma for 3 minutes at a pressure of 8 m torr.

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