Browse Prior Art Database

Fabrication of Crystal Surfaces With Low Dislocation Density

IP.com Disclosure Number: IPCOM000048857D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jauslin, HR: AUTHOR [+3]

Abstract

The reduction of dislocation density in crystals is important for improving crystal quality. namely the emissivity of lasers and light emitting diodes, and the homogeneity of layers in device structures.

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Fabrication of Crystal Surfaces With Low Dislocation Density

The reduction of dislocation density in crystals is important for improving crystal quality. namely the emissivity of lasers and light emitting diodes, and the homogeneity of layers in device structures.

The substrate is polished to have a misorientation of between 0.05' and 1 degrees, preferably between 0.1 degrees and 0.5 degrees, from a main crystallographic direction (e.g., (100), (111), and a layer of a few microns thickness is epitaxially deposited so that a step-riser structure is formed. This deposition step is performed at a supersaturation such that neither a facet is formed nor a pseudo-flat surface is generated. The deposition of further layers is made at low supersaturation so that the transition to a facet can occur.

The substrate with the facet can be used directly for depositing layers required for device structures or as a seed crystal for growing high-performance devices or bulk crystals.

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